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max. n-channel p-channel v ds drain-to-source voltage 12 -12 i d @ t a = 25c continuous drain current, v gs @ 4.5v 6.3 -3.0 i d @ t a = 70c continuous drain current, v gs @ 4.5v 5.2 -2.5 i dm pulsed drain current 26 -13 p d @t a = 25c power dissipation 2.0 w p d @t a = 70c power dissipation 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 12 8.0 v t j, t stg junction and storage temperature range c n-ch p-ch v dss 12v -12v r ds(on) 0.034 ? 0.150 ? hexfet ? power mosfet 6/2/03 IRF7338 description www.irf.com 1 these n and p channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. this dual so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering technique
absolute maximum ratings -55 to + 150 ultra low on-resistance dual n and p channel mosfet surface mount available in tape & reel so-8 d1 n-channel mosfet p-channel mosfet d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 62.5 c/w thermal resistance pd - 94372c
2 www.irf.com parameter min. typ. max. units conditions n-ch 12 ? ? v gs = 0v, i d = 250a p-ch -12 ? ? v gs = 0v, i d = -250a n-ch ? 0.01 ? reference to 25c, i d = 1ma p-ch ? -0.01 ? reference to 25c, i d = -1ma ? ? 0.034 v gs = 4.5v, i d = 6.0a ? ? 0.060 v gs = 3.0v, i d = 2.0a ? ? 0.150 v gs = -4.5v, i d = -2.9a ? ? 0.200 v gs = -2.7v, i d = -1.5a n-ch 0.6 ? 1.5 v ds = v gs , i d = 250a p-ch -0.40 ? -1.0 v ds = v gs , i d = -250a n-ch 9.2 ? ? v ds = 6.0v, i d = 6.0a p-ch 3.5 ? ? v ds = -6.0v, i d = -1.5a n-ch ? ? 20 v ds = 9.6v, v gs = 0v p-ch ? ? -1.0 v ds = -9.6 v, v gs = 0v n-ch ? ? 50 v ds = 9.6v, v gs = 0v, t j = 55c p-ch ? ? -25 v ds = -9.6v, v gs = 0v, t j = 55c i gss gate-to-source forward leakage n-ch ?? ? 100 na v gs = 12v p-ch ? ? 100 v gs = 8.0v n-ch ? ? 8.6 p-ch ? ? 6.6 n-ch ? ? 1.9 p-ch ? ? 1.3 n-ch ? ? 3.9 p-ch ? ? 1.6 n-ch ? 6.0 ? p-ch ? 9.6 ? n-ch ? 7.6 ? p-ch ? 13 ? n-ch ? 26 ? p-ch ? 27 ? n-ch ? 34 ? p-ch ? 25 ? n-ch ? 640 ? p-ch ? 490 ? n-ch ? 340 ? p-ch ? 80 ? n-ch ? 110 ? p-ch ? 58 ? v (br)dss drain-to-source breakdown voltage ? v (br)dss / ? t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs(th) gate threshold voltage g fs forward transconductance i dss drain-to-source leakage current q g total gate charge q gs gate-to-source charge q gd gate-to-drain ("miller") charge t d(on) turn-on delay time t r rise time t d(off) turn-off delay time t f fall time c iss input capacitance c oss output capacitance c rss reverse transfer capacitance

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n-channel i d = 6.0a, v ds = 6.0v, v gs = 4.5v p-channel i d = -2.9a, v ds = -9.6v, v gs = -4.5 v n-channel v dd = 6.0v, i d = 1.0a, r g = 6.0 ? , v gs = 4.5v p-channel v dd = -6.0v, i d = -2.9a, r g = 6.0 ? v gs = -4.5v n-channel v gs = 0v, v ds = 9.0v, ? = 1.0mhz p-channel v gs = 0v, v ds = -9.0v, ? = 1.0khz n-ch p-ch repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. notes: parameter min. typ. max. units conditions n-ch ? ? 6.3 p-ch ? ? -3.0 n-ch ? ? 26 p-ch ? ? -13 n-ch ? ? 1.3 t j = 25c, i s = 1.7a, v gs = 0v p-ch ? ? -1.2 t j = 25c, i s = -2.9a, v gs = 0v n-ch ? 51 76 p-ch ? 37 56 n-ch ? 43 64 p-ch ? 20 30
i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage t rr reverse recovery time q rr reverse recovery charge n-channel t j = 25c, i f = 1.7a, di/dt = 100a/s p-channel t j = 25c, i f = -2.9a, di/dt = -100a/s surface mounted on 1 in square cu board. the n-channel mosfet can withstand 15v v gs max for up to 24 hours over the life of the device.
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0. 1 1 10 v ds , drain-to-source voltage (v) 0. 01 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 25c vgs top 7 .5 v 4 .5 v 4 .0 v 3 .5 v 3 .0 v 2 .7 v 2 .0 v bottom 1 .5v 0. 1 1 10 v ds , drain-to-source voltage (v) 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 150c vgs top 7 .5 v 4 .5 v 4 .0 v 3 .5 v 3 .0 v 2 .7 v 2 .0 v bottom 1.5v 1. 0 2. 0 3. 0 4. 0 v gs , gate-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 20s pulse width 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v
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! 0 5 10 15 20 25 30 i d , drain current (a) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 3.0v v gs = 4.5v 3. 0 4. 0 5. 0 6.0 7. 0 8. 0 v gs , gate -to -source voltage (v) 0. 02 0. 03 0. 04 0. 05 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 6.3a typical power vs. time 0. 00 0. 00 0. 00 0. 01 0. 10 1. 00 10. 00 ti me (s ec ) 0 20 40 60 80 p o w e r ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 6.3a
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1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 12v i d = 6.0a
6 www.irf.com fig 12. maximum drain current vs. case temperature fig 13a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 13b. switching time waveforms
1 0.1 % + - fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 t , case temperature ( c) i , drain current (a) c d
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0. 1 1 10 -v ds , drain-to-source voltage (v) 0. 1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.5v 20s pulse width tj = 25c vgs top - 7.5v - 4 .5 v - 4 .0 v - 3 .5 v - 3 .0 v - 2 .7 v - 2 .0 v bottom -1.5v 0. 1 1 10 -v ds , drain-to-source voltage (v) 0. 1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.5v 20s pulse width tj = 150c vgs top - 7.5v - 4 .5 v - 4 .0 v - 3 .5 v - 3 .0 v - 2 .7 v - 2 .0 v bottom - 1 .5 v 1. 0 2. 0 3. 0 4. 0 -v gs , gate-to-source voltage (v) 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -10v 20s pulse width 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v
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! -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -3.0a 02468101214 -i d , drain current (a) 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -2.7v v gs = -4.5v 2. 0 3. 0 4.0 5. 0 6. 0 7. 0 8. 0 -v gs , gate -to -source voltage (v) 0. 06 0. 08 0. 10 0. 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -3.0a 0. 00 0. 00 0. 00 0. 01 0. 10 1. 00 10. 00 ti me (s ec ) 0 20 40 60 80 p o w e r ( w )
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1 10 100 -v ds , drain-to-source voltage (v) 0 200 400 600 800 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0246810 q g total gate charge (nc) 0 2 4 6 8 10 12 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -9.6v vds= -6.0v i d = -2.9a 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
10 www.irf.com fig 26. maximum drain current vs. case temperature
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 27a. switching time test circuit fig 27b. switching time waveforms fig 28b. gate charge test circuit fig 28a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 0.0 0.6 1.2 1.8 2.4 3.0 t , case temperature ( c) -i , drain current (a) c d
www.irf.com 11 so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mi l l i me t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. out line conf orms t o jedec out line ms -012aa. not e s : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. controlling dimension: millimeter 3. dime ns ions are s hown in millime t e rs [inche s ]. 5 dime ns ion doe s not include mold prot rus ions . 6 dime ns ion doe s not include mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dime ns ion is t he le ngt h of l e ad f or s olde ring t o a s ubs t rat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] example: t his is an irf 7101 (mos f et ) international rectifier logo f 7101 yww xxxx part number lot code ww = we e k y = las t digit of t he year dat e code (yww)
12 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 6/03

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